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DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D119
BYD33 series Fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1996 Jun 05 1996 Sep 18
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Available in ammo-pack.
handbook, 4 columns
BYD33 series
and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass package through ImplotecTM(1) technology. This package is hermetically sealed
k
a
MAM123
Fig.1 Simplified outline (SOD81) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V VR continuous reverse voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V IF(AV) average forward current BYD33D to M BYD33U and V IF(AV) average forward current BYD33D to M BYD33U and V IFRM repetitive peak forward current BYD33D to M BYD33U and V Ttp = 55 C; lead length = 10 mm; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 65 C; PCB mounting (see Fig.19); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 55 C; see Figs 6 and 7 - - 12 11 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 1.30 1.26 V V V V V V V A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT
0.70 0.67
A A
1996 Sep 18
2
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL IFRM PARAMETER repetitive peak forward current BYD33D to M BYD33U and V IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off - - -65 see Figs 12 and 13 -65 CONDITIONS Tamb = 65 C; see Figs 8 and 9 - - -
BYD33 series
MIN.
MAX. 7 6 20 A A A
UNIT
ERSM
non-repetitive peak reverse avalanche energy BYD33D to J BYD33K to V
10 7 +175 +175
mJ mJ C C
Tstg Tj
storage temperature junction temperature
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 1 A; Tj = Tj max; see Figs 14 and 15 IF = 1 A; see Figs 14 and 15 V(BR)R reverse avalanche breakdown voltage BYD33D BYD33G BYD33J BYD33K BYD33M BYD33U BYD33V IR reverse current VR = VRRMmax; see Fig.16 VR = VRRMmax; Tj = 165 C; see Fig.16 trr reverse recovery time BYD33D to J BYD33K and M BYD33U and V Cd diode capacitance f = 1 MHz; VR = 0 V; see Figs 17 and 18 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A see Fig.21 IR = 0.1 mA 300 500 700 900 1100 1300 1500 - - - - - - - - - - - - - - - - - - 1 100 V V V V V V V A A MIN. - - TYP. - - MAX. 1.1 1.3 V V UNIT
- - - -
- - - 20
250 300 500 -
ns ns ns pF
1996 Sep 18
3
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
SYMBOL dI R -------dt PARAMETER maximum slope of reverse recovery current BYD33D to J BYD33K to V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS lead length = 10 mm CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.20 MIN.
BYD33 series
TYP.
MAX.
UNIT
- -
- -
6 5
A/s A/s
VALUE 60 120
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.19. For more information please refer to the "General Part of associated Handbook".
1996 Sep 18
4
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
MGA857
BYD33 series
handbook, halfpage
1.6
handbook, halfpage
1.6
MLB905
I F(AV) (A) 1.2 lead length 10 mm
I F(AV) (A) 1.2 lead length 10 mm
0.8
0.8
0.4
0.4
0 0 BYD33D to M a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200
0 0 BYD33U and V a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 T tp ( oC) 200
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
handbook, halfpage
1.2
MLB902
handbook, halfpage
1.2
MLB906
I F(AV) (A) 0.8
I F(AV) (A) 0.8
0.4
0.4
0
0
100
Tamb ( o C)
200
0
0
100
Tamb ( o C)
200
BYD33D to M a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.
BYD33U and V a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.19. Switched mode application.
Fig.4
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.5
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
1996 Sep 18
5
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
MGA859
handbook, full pagewidth
12
I FRM (A) 10 = 0.05
8 0.1
6 0.2 4 0.5 2 1 0 10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD33D to M Ttp = 55 C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB909
handbook, full pagewidth
12
I FRM (A) 10 = 0.05
8 0.1 6 0.2 4 0.5 2 1 0 10 2
10 1
1
10
10 2
10 3
t p (ms)
10 4
BYD33U and V Ttp = 55C; Rth j-tp = 60 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
6
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
MGA860
handbook, full pagewidth
8
I FRM (A)
6
= 0.05
4
0.1
0.2 2 0.5
1 0 10 2 10 1 1 10 10 2 10 3 10 4
t p (ms)
BYD33D to M Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MLB910
handbook, full pagewidth
8
I FRM (A)
6 = 0.05
4
0.1
0.2 2 0.5 1 0 10 2 10 1 1 10 10 2 10 3 10 4
t p (ms)
BYD33U and V Tamb = 65 C; Rth j-a = 120 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1996 Sep 18
7
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
handbook, halfpage
2.4
MGA869
handbook, halfpage
2.4
MLB904
P (W) 1.6
a=3
2.5 2 1.57 1.42
P (W) 1.6
a = 3 2.5 2 1.57 1.42
0.8
0.8
0
0
0.8 I F(AV) (A)
1.6
0
0
0.8 I F(AV) (A)
1.6
BYD33D to M a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
BYD33U and V a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
handbook, halfpage
200
MGA861
handbook, halfpage
200
MLB907
Tj ( oC)
Tj ( oC)
100
100
D
G
J
K
M
U
V
0
0
400
800
VR (V)
1200
0
0
1000
VR (V)
2000
BYD33D to M Solid line = VR. Dotted line = VRRM; = 0.5.
BYD33U and V Solid line = VR. Dotted line = VRRM; = 0.5.
Fig.12 Maximum permissible junction temperature as a function of reverse voltage.
Fig.13 Maximum permissible junction temperature as a function of reverse voltage.
1996 Sep 18
8
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
handbook, halfpage
8
MGC522
handbook, halfpage
8
MGC523
IF (A) 6
IF (A) 6
4
4
2
2
0
0 0 1 2 V F (V) 3
0
1
2
V F (V)
3
BYD33D to M Solid line: Tj = 25 C. Dotted line: Tj = 175 C.
BYD33U and V Solid line: Tj = 25 C. Dotted line: Tj = 175 C.
Fig.14 Forward current as a function of forward voltage; maximum values.
Fig.15 Forward current as a function of forward voltage; maximum values.
103 handbook, halfpage IR (A) 102
MGA853
102 handbook, halfpage
MGA862
Cd (pF)
10 D, G, J 10 K, M
1 0 100 T j ( o C) 200
1 1 10
102
V R (V)
103
VR = VRRMmax.
BYD33D to M f = 1 MHz; Tj = 25 C.
Fig.16 Reverse current as a function of junction temperature; maximum values.
Fig.17 Diode capacitance as a function of reverse voltage; typical values.
1996 Sep 18
9
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
102 handbook, halfpage
MLB908
handbook, halfpage
50 25
Cd (pF) 7 50 10
2 3 1 1 10 102 V R (V) 103
MGA200
BYD33U and V f = 1 MHz; Tj = 25 C. Dimensions in mm.
Fig.18 Diode capacitance as a function of reverse voltage; typical values.
Fig.19 Device mounted on a printed-circuit board.
IF ndbook, halfpage dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.20 Reverse recovery definitions.
1996 Sep 18
10
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
BYD33 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.21 Test circuit and reverse recovery time waveform and definition.
1996 Sep 18
11
Philips Semiconductors
Product specification
Fast soft-recovery controlled avalanche rectifiers
PACKAGE OUTLINE
BYD33 series
handbook, full pagewidth
5 max 0.81 max 2.15 max
MBC051
28 min
3.8 max
28 min
Dimensions in mm. The marking band indicates the cathode.
Fig.22 SOD81.
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1996 Sep 18
12

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